| 发明名称 |
eFuse and methods of manufacturing the same |
| 摘要 |
In a first aspect, a first apparatus is provided. The first apparatus is an eFuse including (1) a semiconducting layer above an insulating oxide layer of a substrate; (2) a diode formed in the semiconducting layer; and (3) a silicide layer formed on the diode. Numerous other aspects are provided.
|
| 申请公布号 |
US2007099326(A1) |
申请公布日期 |
2007.05.03 |
| 申请号 |
US20050266740 |
申请日期 |
2005.11.03 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;MANDELMAN JACK A.;TONTI WILLIAM R. |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
