| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a programming method improving interference phenomenon between cells. <P>SOLUTION: In a flash memory in which a multitude of word lines are formed between a drain selection line and a source selection line, an LSB program operation to store least significant data bits from the word line adjacent to the source selection line to the word line adjacent to the drain selection line is performed. An MSB program operation to store most significant data bits from the word line adjacent to the source selection line to the word line adjacent to the drain selection line is performed. After the memory cell connected to either one of an even bit line and an odd bit line is programmed from among the memory cells connected to one word line when the LSB program operation or the MSB program operation is performed, the memory cells connected to the rest of the bit lines are programmed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
