| 摘要 |
The present invention relates to a diode, and has an object to simultaneously implement a high di / dt capability, a low reverse recovery loss and a low forward voltage and to suppress generation of voltage oscillation. In order to achieve the above-mentioned object, life time killers are selectively introduced into a semiconductor substrate (20) comprising a P layer (1), an N - layer (21) and an N + layer (3). A density of the introduced life time killers is the highest in a first region (6) adjacent to the P layer (1), and is the second highest in a second region (7) in the N - layer (21). The life time killers are not introduced into a third region (2). Accordingly, a life time in the N - layer (21) is expressed by the first region (6) < the second region (7) < the third region (2). The second region (7) and the third region (2) are adjacent to the P layer (1). In addition, the second region (7) annularly surrounds the third region (2).
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