| 摘要 |
#CMT# #/CMT# The memory module (100) comprises memory chips (104), and two advanced memory buffer (AMB) chips (102,103), which are configured for the control of a subset of the memory chips. The AMB chips are electrically coupled among themselves over point-to-point connections (119). An electrical connection between the two AMB chips and a memory controller is carried out over one of the AMB chips. The memory chips are formed as dual die packages with 2 multiply by 1 giga bit Dynamic random access memory. The memory module is a quad high Dual Inline Memory Module. #CMT# : #/CMT# Independent claims are included for the following: (1) a memory device having a motherboard, a memory controller and a slot for memory module; and (2) an electronic device with a memory device. #CMT#USE : #/CMT# Memory module. #CMT#ADVANTAGE : #/CMT# The advanced memory buffer chips are electrically coupled among themselves over point-to-point connections and an electrical connection between the two advanced memory buffer chips and a memory controller is carried out over one of the advanced memory buffer chips, and hence ensures high transmission rate and is cost limiting. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic top view of a memory module. (Drawing includes non-English language text). 100 : Memory module 101 : Longitudinal axis 102,103 : Advanced memory buffer chips 104 : Memory chips 119 : Point-to-point connection. |
