| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method solving the problem in which some etched by-products re-deposit on other exposed regions of a substrate and cause defects and eventual device failure.SOLUTION: Methods comprise depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate. The deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof.EFFECT: The methods are suitable for fabricating MRAM structures and may integrate ALD and ALE processes without breaking vacuum.SELECTED DRAWING: Figure 2 |
