| 摘要 |
A method of manufacturing a phosphor of SiC excitable by an external light source for emitting fluorescence having a wavelength of 500 nm to 750 nm with a peak wavelength in the range of 500 nm to 650 nm and doped with N and B so that the concentration of N is 10<15>/cm3 to 10<18>/cm<3> and the concentration of B is 10<16>/cm<3> to 1019/cm<3>, or the concentration of B is 10<15>/cm<3> to 10<18>/cm<3> and the concentration of N is 10<16>/cm<3> to 1019/cm3 by thermally diffusing a B source of simple B, LaB6, B4C, TaB2, NbB2, ZrB2, HfB2, or BN into SiC under a vacuum or an inert gas atmosphere at a temperature of at least 1500{C. |
