发明名称 PLASMA DEVICE, CARBON THIN FILM MANUFACTURING METHOD AND COATING METHOD USING THE FORMER
摘要 PROBLEM TO BE SOLVED: To provide a plasma device capable of suppressing the cracking of a cathode material at a carbon thin film coating time.SOLUTION: A plasma device 10 comprises a vacuum vessel 1, an arc type evaporation source 3, a cathode member 4, a shutter 5, an electric power source 7 and a trigger electrode 8. The arc type evaporation source 3 is so fixed on the side wall of the vacuum vessel 1 as to oppose to a substrate 20. The cathode member 4 is made of glassy carbon having a protrusion part, and is attached to the arc type evaporation source 3. The electric power source 7 applies a negative voltage to the arc type evaporation source 3. The trigger electrode 8 contacts or leaves the protrusion part of the cathode member 4. A negative voltage is applied to the arc type evaporation source 3 to bring the trigger electrode 8 into contact with the projection part of the cathode member 4 thereby to generate an arc discharge, and thereby to open the shutter 5 is opened to form a carbon thin film on the substrate 20.SELECTED DRAWING: Figure 1
申请公布号 JP2016172927(A) 申请公布日期 2016.09.29
申请号 JP20160081481 申请日期 2016.04.14
申请人 NISSIN ELECTRIC CO LTD 发明人 KATO KENJI;TAKAHASHI MASATO;SON WANG-QI;MIKAMI TAKASHI;MIYAZAKI TOSHIHIRO
分类号 C23C14/32;C23C14/06 主分类号 C23C14/32
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