Semiconductor Device Comprising a Transistor

摘要

A semiconductor device comprises a transistor in a semiconductor body having a first main surface. The transistor comprises a source region of a first conductivity type, a drain region, a body region of a second conductivity type, different from the first conductivity type, and a gate electrode disposed in gate trenches extending in a first direction parallel to the first main surface. The source region, the body region and the drain region are arranged along the first direction. The body region comprises first ridges extending along the first direction, the first ridges being disposed between adjacent gate trenches in the semiconductor body. The body region further comprises a second ridge. A width of the second ridge is larger than a width of the first ridges, the widths being measured in a second direction perpendicular to the first direction.

主权项

1. A semiconductor device comprising a transistor in a semiconductor body having a first main surface, the transistor comprising:
a source region of a first conductivity type; a drain region; a body region of a second conductivity type, different from the first conductivity type; and a gate electrode disposed in gate trenches extending in a first direction parallel to the first main surface, the source region, the body region and the drain region being disposed along the first direction, the body region comprising first ridges extending along the first direction, the first ridges being disposed between adjacent gate trenches in the semiconductor body, the body region further comprising a second ridge, a width of the second ridge being larger than a width of the first ridges, the widths being measured in a second direction perpendicular to the first direction.