发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM |
摘要 |
A semiconductor memory device includes a memory cell, and a control circuit configured to execute a writing operation on the memory cell in response to a write command. The writing operation includes a first operation in which a first initial program voltage is applied and a second operation in which a second initial program voltage higher than the first initial program voltage is applied. The control circuit, in response to a status inquiry command, outputs a first signal when the status inquiry command is received during execution of the first operation, and outputs a second signal which is different from the first signal when the status inquiry command is received during execution of the second operation. |
申请公布号 |
US2016365150(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
US201615094631 |
申请日期 |
2016.04.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TOKIWA Naoya |
分类号 |
G11C16/10;G11C16/26 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device comprising:
a memory cell; and a control circuit configured to execute a writing operation on the memory cell in response to a write command, the writing operation including a first operation in which a first initial program voltage is applied and a second operation in which a second initial program voltage higher than the first initial program voltage is applied, wherein the control circuit, in response to a status inquiry command, outputs a first signal when the status inquiry command is received during execution of the first operation, and outputs a second signal which is different from the first signal when the status inquiry command is received during execution of the second operation. |
地址 |
Tokyo JP |