| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve reduction in manufacturing cost and improvement in productivity, while suppressing the off current of a TFT. <P>SOLUTION: A manufacturing method includes a semiconductor film forming step of forming a first semiconductor film 17 and a second semiconductor film 18 on a substrate 11; a first impurity injection step of injecting p-type impurities into both the entire first semiconductor film 17 and a slope portion 19 of the semiconductor film 18; and a second impurity injection step of injecting p-type impurities into the second semiconductor film 18. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
