发明名称 |
Direct current superposition curing for resist reflow temperature enhancement |
摘要 |
Techniques herein include methods for curing a layer of material (such as a resist) on a substrate to enable relatively greater heat reflow resistance. Increasing reflow resistance enables successful directed self-assembly of block copolymers. Techniques include receiving a substrate having a patterned photoresist layer and positioning this substrate in a processing chamber of a capacitively coupled plasma system. The patterned photoresist layer is treated with a flux of electrons by coupling negative polarity direct current power to a top electrode of the plasma processing system during plasma processing. The flux of electrons is accelerated from the top electrode with sufficient energy to pass through a plasma and its sheath, and strike the substrate such that the patterned photoresist layer changes in physical properties, which can include an increased glass-liquid transition temperature. |
申请公布号 |
US9520270(B2) |
申请公布日期 |
2016.12.13 |
申请号 |
US201414340721 |
申请日期 |
2014.07.25 |
申请人 |
Tokyo Eelctron Limited |
发明人 |
Mohanty Nihar;Ko Akiteru;Liu Chi-Chun |
分类号 |
H01J37/32;G03F7/40;H01L21/3105;H01L21/027;H01L21/308;H01L21/3065;B81C1/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
|
主权项 |
1. A method of curing a layer of material on a substrate, the method comprising:
receiving a substrate having a patterned photoresist layer, the patterned photoresist layer created from a negative tone developer photoresist; positioning the substrate in a processing chamber of a capacitively coupled plasma system; treating the patterned photoresist layer with a flux of electrons by coupling negative polarity direct current power to a top electrode of the plasma processing system, the flux of electrons being accelerated from the top electrode with sufficient energy to pass through a plasma and strike the substrate such that the patterned photoresist layer changes in physical properties, wherein the patterned photoresist layer changing in physical properties includes increasing a value of a glass-liquid transition temperature of the negative tone developer photoresist as compared to prior to being treated with the flux of electrons, wherein the glass-liquid transition temperature of the negative tone developer photoresist is increased above 210 degrees Celsius; dispensing a block copolymer film on the patterned photoresist layer; and activating phase-separation of the block copolymer film to form different polymer features, wherein activating phase separation includes heating the substrate to a temperature sufficient to cause copolymers to segregate resulting in the different polymer features self-assembling within the patterned photoresist layer. |
地址 |
Tokyo JP |