发明名称 |
Dual photodiode image pixels with preferential blooming path |
摘要 |
An image sensor with an array of image sensor pixels is provided. Each image sensor pixel may include a set of photodiodes formed in a semiconductor substrate, a color filter structure formed over the set of photodiodes, a microlens formed over the color filter structure, and associated pixel circuitry coupled to the set of photodiodes. The set of photodiodes may include at least two photodiodes linked together via a preferential blooming channel that provides a reduced potential barrier between the two photodiodes. This allows excess charge to spill over from one photodiode to another when more charge is concentrated in a particular photodiode. Configured in this way, the pixel can provide depth sensing capabilities without suffering from reduced pixel capacity. |
申请公布号 |
US9515105(B2) |
申请公布日期 |
2016.12.06 |
申请号 |
US201514624917 |
申请日期 |
2015.02.18 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
Barna Sandor;Johnson Richard Scott |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
Treyz Law Group, P.C. |
代理人 |
Treyz Law Group, P.C. ;Tsai Jason |
主权项 |
1. An image sensor pixel, comprising:
a substrate; a first photodiode that is formed in the substrate and that generates charge in response to incident light; a second photodiode formed in the substrate, wherein the first and second photodiodes are formed laterally with respect to each other along a surface of the substrate; and a preferential blooming channel interposed between the first and second photodiodes in the substrate that reduces a potential barrier between the first and second photodiodes, wherein some of the charge flows directly into the second photodiode via the preferential blooming channel. |
地址 |
Phoenix AZ US |