发明名称 Dual photodiode image pixels with preferential blooming path
摘要 An image sensor with an array of image sensor pixels is provided. Each image sensor pixel may include a set of photodiodes formed in a semiconductor substrate, a color filter structure formed over the set of photodiodes, a microlens formed over the color filter structure, and associated pixel circuitry coupled to the set of photodiodes. The set of photodiodes may include at least two photodiodes linked together via a preferential blooming channel that provides a reduced potential barrier between the two photodiodes. This allows excess charge to spill over from one photodiode to another when more charge is concentrated in a particular photodiode. Configured in this way, the pixel can provide depth sensing capabilities without suffering from reduced pixel capacity.
申请公布号 US9515105(B2) 申请公布日期 2016.12.06
申请号 US201514624917 申请日期 2015.02.18
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 Barna Sandor;Johnson Richard Scott
分类号 H01L27/146 主分类号 H01L27/146
代理机构 Treyz Law Group, P.C. 代理人 Treyz Law Group, P.C. ;Tsai Jason
主权项 1. An image sensor pixel, comprising: a substrate; a first photodiode that is formed in the substrate and that generates charge in response to incident light; a second photodiode formed in the substrate, wherein the first and second photodiodes are formed laterally with respect to each other along a surface of the substrate; and a preferential blooming channel interposed between the first and second photodiodes in the substrate that reduces a potential barrier between the first and second photodiodes, wherein some of the charge flows directly into the second photodiode via the preferential blooming channel.
地址 Phoenix AZ US
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