发明名称 |
SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE ELECTRICALLY CONDUCTIVE PILLAR, SEMICONDUCTOR STRUCTURE INCLUDING A CONTACT CONTACTING AN OUTER LAYER OF AN ELECTRICALLY CONDUCTIVE STRUCTURE AND METHOD FOR THE FORMATION THEREOF |
摘要 |
A semiconductor structure includes a substrate, at least one electrically conductive pillar provided over the substrate and an electrically conductive structure provided over the substrate. The electrically conductive pillar includes an inner portion and an outer layer that is provided below the inner portion and lateral to the inner portion. The electrically conductive structure also includes an inner portion and an outer layer that is provided below the inner portion and lateral to the inner portion. The electrically conductive structure annularly encloses each of the at least one electrically conductive pillar. The outer layer of each of the at least one electrically conductive pillar contacts the outer layer of the electrically conductive structure. The outer layer of the at least one electrically conductive pillar and the outer layer of the electrically conductive structure are formed of different metallic materials. |
申请公布号 |
US2016247891(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201514628947 |
申请日期 |
2015.02.23 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Moll Hans-Peter;Baars Peter;Kammler Thorsten |
分类号 |
H01L29/49;H01L23/535;H01L21/8238;H01L27/092 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Grand Cayman KY |