| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with high breakdown voltage, which controls high power.SOLUTION: A transistor is provided that comprises: a gate electrode; a gate insulation layer on the gate electrode; an oxide semiconductor layer on the gate insulation layer and overlapping with the gate electrode; and a source electrode and a drain electrode each in contact with the oxide semiconductor layer and having ends overlapping with the gate electrode. In a region where the gate electrode overlaps with the oxide semiconductor layer, the gate insulation layer has a first region where the end of the gate insulation layer overlaps with the drain electrode and a second region adjacent to the first region. Electrostatic capacity of the first region is smaller than that of the second region.SELECTED DRAWING: Figure 1 |
