| 发明名称 |
LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION |
| 摘要 |
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer. |
| 申请公布号 |
US2016315218(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201615199803 |
申请日期 |
2016.06.30 |
| 申请人 |
Apple Inc. |
发明人 |
Bour David P.;McGroddy Kelly;Haeger Daniel Arthur;Perkins James Michael;Chakraborty Arpan;Drolet Jean-Jacques P.;Sizov Dmitry S. |
| 分类号 |
H01L33/06;H01L33/30;H01L33/00 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode (LED) comprising:
a p-n diode layer including:
a top doped layer doped with a first dopant type;a bottom doped layer doped with a second dopant type opposite the first dopant type;an active layer between the top doped layer and the bottom doped layer; andp-n diode layer sidewalls spanning the top doped layer, the active layer, and the bottom doped layer;wherein lateral edges of the active layer are internally confined inside the p-n diode layer sidewalls. |
| 地址 |
Cupertino CA US |
