| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which can reduce leak current, while restraining rise of ON-resistance. SOLUTION: A conductive group III nitride substrate 13 has a first surface 13a and a second surface 13b. The conductive group III nitride substrate 13 has a transition density D<SB>13</SB>of 1×10<SP>6</SP>cm<SP>-2</SP>or smaller. An n-type gallium nitride system semiconductor drift layer 15 is provided on the first surface 13a of the substrate 13, and has a carrier concentration N<SB>15</SB>of 1×10<SP>17</SP>cm<SP>-3</SP>or smaller. A first n-type gallium nitride system semiconductor layer 17 is provided on the n-type gallium nitride system semiconductor drift layer 15 and has a carrier concentration n<SB>17</SB>of 0.5×10<SP>17</SP>cm<SP>-3</SP>or smaller. A Schottky electrode 19 forms a Schottky junction in the first n-type gallium nitride system semiconductor layer 17. An ohmic electrode 21 is provided on a second surface of the substrate 13. COPYRIGHT: (C)2008,JPO&INPIT |
