| 摘要 |
PROBLEM TO BE SOLVED: To separately control a distance from a channel into optimum states under a gate electrode of a salicide layer on a source/drain region of a MOS transistor in an LDD structure, and a distance from a channel into optimum states under a gate electrode of a deep diffusion layer in the source/drain region. SOLUTION: When forming the MOS transistor in the LDD structure including gate sidewalls 14 at both ends of a gate electrode 12 and a salicide layer 16 on the source/drain region, thickness of the gate side walls when forming a deep diffusion layer 13b of the source/drain region is made different from thickness of the gate side walls, when forming the salicide layer 16 on the source/drain region. COPYRIGHT: (C)2008,JPO&INPIT
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