Phase change random access memory device, method of fabricating the same, and method of operating the same

摘要

Provided are a phase change random access memory (PRAM), a method of fabricating the PRAM, and a method of operating the PRAM. The PRAM may include a gate electrode configured to temporarily increase an electrical resistance of the lower electrode contact layer if a voltage is applied to the gate electrode, and around the lower electrode contact layer between a switching device and a phase change layer. A spacer insulating layer is disposed between the lower electrode contact layer and the gate electrode.