SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a semiconductor substrate and a semiconductor element arranged on a predetermined surface side of the semiconductor substrate. The semiconductor element includes: a first region portion at which a first conductivity type semiconductor region is arranged on the surface side of the semiconductor substrate; a second region portion at a position separated from the first region portion; and a gate electrode arranged between the first region portion and the second region portion through an insulating film. In the first region portion, a first conductivity type semiconductor region is arranged. In the second region portion, a first conductivity type semiconductor region and a second conductivity type semiconductor region are alternately arranged. The semiconductor structure portions with a variety of types having ratios of the first conductivity type semiconductor region to the second conductivity type semiconductor region different from each other are provided at the second region portion.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; and at least one of semiconductor elements arranged on a predetermined surface side of the semiconductor substrate, wherein: the at least one of semiconductor elements include:
a first region portion at which a first conductivity type semiconductor region is arranged on the predetermined surface side of the semiconductor substrate,a second region portion which is arranged at a position separated from the first region portion, on the predetermined surface side of the semiconductor substrate, and in which a plurality of semiconductor structure portions is arranged, a first conductivity type semiconductor region and a second conductivity type semiconductor region alternately provided in each of the plurality of semiconductor structure portions, anda gate electrode arranged on a region in the semiconductor substrate between the first region portion and the second region portion, with an insulating film interposed between the semiconductor substrate and the gate electrode; and the plurality of semiconductor structure portions with a variety of types, which are different in a ratio of the first conductivity type semiconductor region to the second conductivity type semiconductor region, are provided at the second region portion.