| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching device that enhances the determination precision of overlaying of a processing target object such as a wafer on a stopper.SOLUTION: A plasma etching apparatus includes a processing chamber filled with etching gas for plasma-etching a workpiece, a heater stage 20 for increasing the temperature of the workpiece in the processing chamber while the workpiece is mounted on a mount face 21a, a stopper 22 which is formed on the mount face of the heater stage and suppresses movement of the workpiece due to the plasma-etching, a determination groove 24 having a predetermined pattern which is formed on the mount face, and a determination unit for determining whether or not a pattern having the shape corresponding to a determination groove is formed on a mount face of the workpiece contacting the mount face due to entering of plasma occurring in the plasma etching step into the determination groove.SELECTED DRAWING: Figure 2 |
