| 摘要 |
The present invention provides a push-pull bridge-type magnetic sensor for high-intensity magnetic fields. The sensor comprises two substrates, magnetoresistive sensing elements, push arm attenuators, and pull arm attenuators. Magnetization directions of pinning layers of the magnetoresistive sensing elements located on a same substrate are parallel, and magnetization directions of pinning layers of the magnetoresistive sensing elements on different substrates are anti-parallel, wherein the magnetoresistive sensing elements on one substrate are electrically connected to one another to form push arms of a push-pull bridge, and the magnetoresistive sensing elements on the other substrate are electrically connected to one another to form pull arms of the push-pull bridge. The magnetoresistive sensing elements in the push arms and the pull arms are arranged in columns above or below the push arm attenuators and the pull arm attenuators. The sensor can be implemented in quasi-bridge, half-bridge, or full-bridge structures, and it has the following advantages: low power consumption, small offset, good linearity, wide operation range, the capability to operate in high-intensity magnetic fields, and twice the maximum sensitivity of a single-chip referenced bridge magnetic sensor. |
| 主权项 |
1. A push-pull bridge-type magnetic sensor for high-intensity magnetic fields, the push-pull bridge-type magnetic sensor comprising:
a push arm substrate and a pull arm substrate; at least one push arm constituted by electrical interconnection of one or more magnetoresistive sensing elements, and at least one pull arm constituted by electrical interconnection of one or more magnetoresistive sensing elements; at least one push arm attenuator and at least one pull arm attenuator; the push arm and the push arm attenuator being deposited on the push arm substrate, and the pull arm and the pull arm attenuator being deposited on the pull arm substrate; a long axis direction of the push arm attenuator and a long axis direction of the pull arm attenuator parallel to the Y-axis direction, and short axis directions being an X-axis direction; the magnetoresistive sensing elements in the push arm being arranged in columns above or below the push arm attenuators, and the magnetoresistive sensing elements in the pull arm being arranged in columns above or below the pull arm attenuators; magnetization directions of magnetic pinning layers of the magnetoresistive sensing elements on the same substrate being the same, and magnetization directions of magnetic pinning layers of the magnetoresistive sensing elements on the push arm substrate and the pull arm substrate being opposite; and sensitivity directions of the magnetoresistive sensing elements on the push arm substrate and the pull arm substrate are the X-axis direction. |
