发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device according to an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first conductive layer provided on the first insulating film, a second insulating film provided on the semiconductor layer and the first conductive layer, a second conductive layer provided on the second insulating film, a first contact portion connecting the semiconductor layer and the second conductive layer, and a second contact portion connecting the first conductive layer and the second conductive layer. A distance between the semiconductor layer and an upper portion of the second insulating film adjacent to the second contact portion is greater than a distance between the semiconductor layer and an upper portion of the second insulating film adjacent to the first contact portion. The second contact portion has a larger width than the first contact portion.
申请公布号 US2016268193(A1) 申请公布日期 2016.09.15
申请号 US201514855067 申请日期 2015.09.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Nishikawa Yukie;Kishida Motoya
分类号 H01L23/522;H01L23/532 主分类号 H01L23/522
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor layer; a first insulating film provided on the semiconductor layer; a first conductive layer provided on the first insulating film; a second insulating film provided on the semiconductor layer and the first conductive layer; a second conductive layer provided on the second insulating film; a first contact portion connecting the semiconductor layer and the second conductive layer; and at least one second contact portion connecting the first conductive layer and the second conductive layer, wherein a distance between the semiconductor layer and an upper portion of the second insulating film adjacent to the second contact portion is greater than a distance between the semiconductor layer and an upper portion of the second insulating film adjacent to the first contact portion, and the second contact portion has a larger width than the first contact portion.
地址 Tokyo JP