SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent TFT contamination due to Cu by sandwiching a Cu wiring between silicon nitride films.SOLUTION: A semiconductor device comprises: a crystalline semiconductor film; a gate insulation film on the crystalline semiconductor film and a gate electrode on the gate insulation film; a first interlayer insulation film on the crystalline semiconductor film and the gate electrode; a first wiring electrically connected to the crystalline semiconductor film provided on the first interlayer insulation film via a first contact part; a first silicon nitride film provided with a second contact part in which a part of the first wiring is exposed on the first interlayer insulation film and the first wiring, and a second interlayer insulation film on the first silicon nitride film; a barrier layer provided on the first wiring exposed through a second contact part and for preventing Cu diffusion; a second wiring provided in the second contact part and composed of Cu on the barrier layer; and a second silicon nitride film provided by covering the second wiring.SELECTED DRAWING: Figure 14