| 摘要 |
PROBLEM TO BE SOLVED: To solve such problems that, when a silicon semiconductor layer is subjected to oxidation treatment while a Cu alloy is used to wiring of a thin film transistor (TFT), deterioration in TFT mobility occurs, and when an oxide semiconductor layer is brought into contact with a Cu alloy to be heated, an increase in a subthreshold coefficient and a negative shift of a threshold voltage occur and a TFT exhibits a normally-on operation.SOLUTION: A TFT includes, on s substrate 1, a gate insulation film 5, a Si-based semiconductor layer 8, source/drain electrodes 11/12 having a Cu alloy 9 layer, and an oxide film 7a formed at a boundary of the Si-based semiconductor layer with the source electrode and the drain electrode. The Cu alloy layer contains Cu and at least one kind of additive element. When the peak value of a depth of an oxygen atomic concentration in the oxide film is 40 atom% or more and 66 atom% or less, and a distance from the position of the peak value of the oxygen atomic concentration or from the boundary of the Si-based semiconductor layer with the source electrode and the drain electrode, at which an oxygen distribution indicates 10 atom%, is defined as a film thickness of the oxide film, the film thickness of the oxide film is 1.8 nm or less.SELECTED DRAWING: Figure 8 |
