| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing storage of electric charges in a semiconductor layer.SOLUTION: A semiconductor device comprises: a semiconductor layer that has an element formation region comprising a semiconductor element, and an element isolation region contacted with the element formation region in a plan view, comprising a first opening, and consisting of a first insulation member; a second insulation member formed so that its first surface is contacted with a principal surface of the semiconductor layer, and that comprises a second opening communicated with the first opening, and a third opening provided at a different position from the second opening; a third insulation member that comprises a second surface contacted with a rear face of the semiconductor layer opposed to the principal surface of the semiconductor layer, and a third surface opposed to the second surface, and that has a fourth opening communicated with the first opening; and a second conductive member connected with a first conductive member having a thickness smaller than a distance between the principal surface of the semiconductor layer and the third surface, and formed in the first opening, the second opening, and the fourth opening that have a continuous side wall.SELECTED DRAWING: Figure 7 |
