Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions

摘要

Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about from about 28 to about 70 volts, a gate to source voltage (Vgs) of from about -3.3 to about -14 volts and a normal operating temperature for at least about 10 hours.