BASNO3 THIN FILM TRANSISTOR HAVING HIGH FIELD-EFFECT MOBILITY, AND MANUFACTURING METHOD THEREFOR

摘要

The present invention relates to: a transparent transistor in which an oxygen-deficient or impurities-injected, epitaxial or homo-epitaxial barium stannate semiconductor oxide thin film is deposited on a single-crystal substrate having a lattice constant, when viewed as a cubic structure, of approximately 3.8-4.2 Å, the transparent transistor having excellent electrical properties and being thermally stable; and a manufacturing method therefor.