| 摘要 |
PROBLEM TO BE SOLVED: To provide an atomic layer deposition apparatus relaxing a vibration or a move of a substrate, the vibration or move being caused by rotation of a substrate carrier.SOLUTION: An atomic layer deposition includes; a deposition head 14 mounted rotatably around a deposition head center axis and a susceptor having an upper surface supporting a substrate S. A lower surface includes multiple treatment compartments, each compartment including a purging gas injection section 6, a first precursor injecting section 2, a gas exhausting section 4, the purging gas injection section 6, a second precursor gas injecting section 2', and the gas exhausting section 4. Each section extends from an inside part of the lower surface of the deposition head 14 in a radius direction to an outside part of the lower surface in the radius direction in the radius direction. A combination of a distance between the lower surface and the upper surface, a rotation speed of the deposition head and a flow rate and a pressure of purging gas flow is selected such that the first and second precursor gases are not mixed substantially.SELECTED DRAWING: Figure 6 |
