| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a short-circuit occurred between a capacitor and a bit-line-contact, and assuring a satisfactory capacitance of the capacitor; and to provide its manufacturing method. SOLUTION: The semiconductor device includes: a source-drain region 203 of a transistor formed in a semiconductor substrate 200; a capacitor connected to one of the source-drain region 203, and including a lower electrode 213, a capacitive insulating film 214, and an upper electrode 215; a spacer film 212 including an insulating body formed on the side surface of the lower electrode 213; a bit-line 221 formed over the capacitor; and a conductive film plug 209 for connecting the bit-line 221 and the other of the source-drain region 203. The insulation between the lower electrode 213 and the conductive film plug 209 is maintained by the spacer film 212. COPYRIGHT: (C)2008,JPO&INPIT
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