发明名称 |
SEMICONDUCTOR DEVICE HAVING THROUGH ELECTRODE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device having a through electrode and a method of fabricating the same are disclosed. In one embodiment, a semiconductor device includes a first insulating layer formed on a semiconductor substrate. A wiring layer having a first aperture to expose a portion of the first insulating layer is formed on the first insulating layer. A second insulating layer is formed on an upper portion of the wiring layer and in the first aperture. A conductive pad having a second aperture to expose a portion of the second insulating layer is formed on the second insulating layer. A through hole with a width narrower than widths of the first and second apertures is formed through the first and second insulating layers and an upper portion of the semiconductor substrate. A through electrode is formed in the through hole.
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申请公布号 |
US2009008790(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20080132925 |
申请日期 |
2008.06.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HO-JIN;KIM NAM-SEOG;KWON YONG-CHAI;CHUNG HYUN-SOO;LEE IN-YOUNG;HWANG SON-KWAN |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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