| 摘要 |
A semiconductor device and an oscillator are provided to improve phase noise characteristics and to intensify frequency selecting width by using an enhanced passive element. An IC(Integrated Circuit)(12) and a plurality of connection electrodes(14,15) for contacting electrically the IC are formed on a semiconductor substrate(10). A first resin layer(70) is formed on the substrate except for the connection electrodes. A connection metal line layer(25,26) is formed between the substrate and the first resin layer in order to be connected to one out of the connection electrodes. A Cu line layer is formed on the first resin layer in order to contact the connection metal line layer. At this time, a passive element composed of the connection metal line layer and the Cu line layer is formed on the resultant structure. A second resin layer(75) is formed on the resultant structure in order to enclose the Cu line layer. External terminals(81) are formed on the resultant structure in order to contact selectively the connection electrodes. The external terminals are protruded from the second resin layer. The passive element is a spiral inductor. |
