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发明名称
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING A TWO-LAYER GATE ELECTRODE TRANSISTOR AND METHOD OF MANUFACTURING THE DEVICE
摘要
申请公布号
KR100815305(B1)
申请公布日期
2008.03.19
申请号
KR20060050817
申请日期
2006.06.07
申请人
发明人
分类号
H01L21/8247
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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