| 摘要 |
<P>PROBLEM TO BE SOLVED: To monitor the charge-up time on an actual pattern, in real time, and to measure a wafer internal surface distribution of a self-match bias. <P>SOLUTION: A plurality of sensors 50 are stuck on a wafer surface at different places and mounted on a stage in a plasma chamber. An RF bias is applied and a plasma 32 is generated inside the plasma chamber and a wafer is exposed to the plasma 32. When the wafer is exposed to the plasma 32, charge-up is generated at the bottom of a contact hole 56 in each sensor 50 by electron shield effects. Namely, deviation of electric charges is generated between a contact hole pattern surface and the bottom of the contact hole 56. Consequently, different potentials are generated at an upper electrode 55 and a lower electrode 53. At this time, both or either the potentials of the upper electrode 55 or the lower electrode 53 is measured, or the potential difference Δ between the upper electrode 55 and lower electrode 53 is measured for monitoring. <P>COPYRIGHT: (C)2009,JPO&INPIT |
