发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME |
摘要 |
A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate. |
申请公布号 |
US2016218214(A1) |
申请公布日期 |
2016.07.28 |
申请号 |
US201615092171 |
申请日期 |
2016.04.06 |
申请人 |
Kim Dong Hyuk;Shin Dongsuk;Kim Myungsun;Chung Hoi Sung |
发明人 |
Kim Dong Hyuk;Shin Dongsuk;Kim Myungsun;Chung Hoi Sung |
分类号 |
H01L29/78;H01L29/16;H01L27/092;H01L29/165;H01L29/06;H01L29/08;H01L29/161 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Seongnam-si KR |