RRAM PROCESS WITH ROUGHNESS TUNING TECHNOLOGY

摘要

The present invention relates to metal oxide based memory devices and methods for manufacturing such devices; and more particularly to memory devices having data storage materials based on metal oxide compounds fabricated with a roughness tuning process including an ion bombardment step of a bottom electrode surface prior to formation of a memory element on the bottom electrode surface. Ion bombardment improves the flatness of the bottom electrode which is beneficial in achieving a more uniform electrical field during operation, which improves device reliability.

主权项

1. A method of making a memory cell, comprising:
forming an interlayer conductor extending through an insulation layer, the interlayer conductor having a first end and a second end; and forming a memory element from the second end of the interlayer conductor including;
recessing the second end of the interlayer conductor to below a top surface of the insulation layer;flattening the second end of the interlayer conductor to create a flattened top surface of the interlayer conductor;forming an indentation in the insulation layer around the second end of the interlayer conductor, wherein the indentation includes a bottom portion with a surface that is recessed below the top surface of the insulation layer, and a concave sidewall portion extending away from the bottom portion; andoxidizing the flattened second end of the interlayer conductor to form the memory element.