| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate; a first insulating layer comprising a first section and a second section, the first section being in contact with the semiconductor substrate and a bottom of the first semiconductor pillar, and the second section covering a side of the first semiconductor pillar; conductive layers and second insulating layers stacked one by one above the semiconductor substrate and covering the second section of the first insulating layer; a first plug on the first semiconductor pillar; and an interconnect on the first plug. |
| 申请公布号 |
US2016218109(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201615092774 |
申请日期 |
2016.04.07 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHINOHARA Hiroshi;Sato Atsuhiro;Yonehama Keisuke;Baba Yasuyuki;Minami Toshifumi;Maeda Hiroyuki;Saito Shinji;Kamata Hideyuki |
| 分类号 |
H01L27/115;H01L23/528;H01L23/522 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a semiconductor layer; a first semiconductor pillar above the semiconductor layer; a first insulating layer comprising a first section and a second section, the first section being in contact with the semiconductor layer and a bottom of the first semiconductor pillar, and the second section covering a side of the first semiconductor pillar; and conductive layers and second insulating layers stacked one by one above the semiconductor layer and covering the second section of the first insulating layer. |
| 地址 |
Minato-ku JP |
