发明名称 |
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same |
摘要 |
In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.
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申请公布号 |
US2006125006(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20050254727 |
申请日期 |
2005.10.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HARADA YOSHINAO;HAYASHI SHIGENORI;NIWA MASAAKI |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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主权项 |
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地址 |
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