发明名称 ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUITS, INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR FORMING THE ESD PROTECTION CIRCUITS
摘要 An electrostatic discharge (ESD) protection circuit includes a field oxide device in a substrate, wherein the field oxide device is coupled between an input/output (I/O) pad and a first terminal. The field oxide device includes a drain end and a source end having a first type of dopant. The field oxide device includes a field oxide structure between the drain end and the source end. The field oxide structure has a top surface co-planar with a top surface of a substrate. A first doped region having a second type of dopant is adjacent to the drain end. A second doped region having the second type of dopant is adjacent to the source end. The field oxide structure is in a well and the source end and the drain end are separate from the well. The substrate has the second type of dopant and is around the field oxide structure.
申请公布号 US2016284689(A1) 申请公布日期 2016.09.29
申请号 US201615171280 申请日期 2016.06.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LEE Shu-Chuan;CHEN Kuo-Ji;MA Wade
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
主权项 1. An electrostatic discharge (ESD) protection circuit, the ESD protection circuit comprising: a first field oxide device in a substrate, wherein the first field oxide device is coupled between an input/output (I/O) pad and a first terminal that is capable of providing a first supply voltage, and the first field oxide device comprises: a drain end having a first type of dopant,a source end having the first type of dopant,a field oxide structure between the drain end and the source end, wherein the field oxide structure is an isolation structure having a top surface co-polar with a top surface of the substrate,a first doped region having a second type of dopant disposed adjacent to the drain end and coupled to the substrate, anda second doped region having the second type of dopant disposed adjacent to the source end and coupled to the substrate,wherein the field oxide structure is in a first well and both of the source end and the drain end are separate from the first well, and the substrate has the second type of dopant and is around the field oxide structure.
地址 Hsinchu TW