发明名称 半導体発光装置及びその製造方法
摘要 According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer.
申请公布号 JP6045999(B2) 申请公布日期 2016.12.14
申请号 JP20130159346 申请日期 2013.07.31
申请人 株式会社東芝 发明人 富澤 英之;小島 章弘;島田 美代子;秋元 陽介;下宿 幸;古山 英人;杉崎 吉昭
分类号 H01L33/44;H01L33/60 主分类号 H01L33/44
代理机构 代理人
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