SEMICONDUCTOR DEVICE STRUCTURES COMPRISING POLYCRYSTALLINE CVD DIAMOND WITH IMPROVED NEAR-SUBSTRATE THERMAL CONDUCTIVITY

摘要

A semiconductor device structure comprising:
a layer of III-V compound semiconductor material;a layer of polycrystalline CVD diamond material; andan interface region between the layer of III-V compound semiconductor material and the layer of polycrystalline CVD diamond material, the interface region including a diamond nucleation layer of polycrystalline CVD diamond which is formed during an initial nucleation phase of polycrystalline CVD diamond growth over a substrate comprising the layer of III-V compound semiconductor material,wherein the diamond nucleation layer is such that a Raman signal generated by a laser focused on a region comprising the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm−1 having a full width half-maximum of no more than 5.0 cm−1,wherein the diamond nucleation layer is such that said Raman signal further exhibits one or both of the following characteristics:
(i) an sp2 carbon peak at 1550 cm−1 having a height which is no more than 20% of a height of the sp3 carbon peak at 1332 cm−1 after background subtraction when using a Raman excitation source at 633 nm; and(ii) the sp3 carbon peak at 1332 cm−1 is no less than 10% of local background intensity in a Raman spectrum using a Raman excitation source at 785 nm, andwherein an average nucleation density at a nucleation surface of the diamond nucleation layer is no less than 1×108 cm−2 and no more than 1×1012 cm−2.

主权项

1. A semiconductor device structure comprising:
a layer of III-V compound semiconductor material; a layer of polycrystalline CVD diamond material; and an interface region between the layer of III-V compound semiconductor material and the layer of polycrystalline CVD diamond material, the interface region including a diamond nucleation layer of polycrystalline CVD diamond which is formed during an initial nucleation phase of polycrystalline CVD diamond growth over a substrate comprising the layer of III-V compound semiconductor material, wherein the diamond nucleation layer is such that a Raman signal generated by a laser focused on a region comprising the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm−1 having a full width half-maximum of no more than 5.0 cm−1, wherein the diamond nucleation layer is such that said Raman signal further exhibits one or both of the following characteristics:
(i) an sp2 carbon peak at 1550 cm−1 having a height which is no more than 20% of a height of the sp3 carbon peak at 1332 cm−1 after background subtraction when using a Raman excitation source at 633 nm; and(ii) the sp3 carbon peak at 1332 cm−1 is no less than 10% of local background intensity in a Raman spectrum using a Raman excitation source at 785 nm, and wherein an average nucleation density at a nucleation surface of the diamond nucleation layer is no less than 1×108 cm−2 and no more than 1×1012 cm−2.