Plasma Processing Apparatus and Coil Used Therein

摘要

A plasma etching apparatus includes a chamber having a processing space and a plasma generating space 4 defined therein and a coil 20 wound around the processing chamber, the coil 20 has at least three inward projecting portions 21 formed thereon which project inward in a radial direction with respect to a pitch circle P defined outside a portion of the processing chamber 2 corresponding to the plasma generating space 4, and the at least three inward projecting portions 21 are arranged at equal intervals along a circumferential direction of the pitch circle P.

主权项

1. A plasma processing apparatus comprising:
a processing chamber having an inner space defining a plasma generating space; a processing gas supply configured to supply a processing gas into the processing chamber; an annular coil wound to surround an outer peripheral surface of a portion of the processing chamber corresponding to the plasma generating space; a coil power supply configured to supply RF power to the coil; and a platen disposed in the processing chamber and configured to receive a substrate to be processed by plasma generated from the processing gas, the coil having:
two power introducing portions with a gap therebetween, one of the power introducing portions being connected to the coil power supply mechanism and the other being connected to earth, andat least three inward projecting portions projecting inward in a radial direction with respect to a reference circle defined around the processing chamber corresponding to the plasma generating space, andthe at least three inward projecting portions being formed at equal intervals along a circumferential direction of the reference circle.