| 摘要 |
PURPOSE: In a bipolar transistor, when backward voltage is created as element power, a high field effect is formed between a base area and a collector area. Because the field effect between two areas is also formed on an insulated oxidation layer, the insulated oxidation layer is destroyed. CONSTITUTION: A bipolar transistor comprises the first electric conduction type's semiconductor board(21), the second electric conduction type's epitaxial layer(23) formed on that semiconductor board and divided into an element separating area and an element activating area, a trench(t) formed through the epitaxial layer of the element separating area, an insulating film(28) formed on the trench's inner wall, an electric conducting film(30) formed by filling the trench and transferred to the semiconductor board electrically, the first electric conduction type's dopant area formed on the both sides of the upper trench surrounding the trench block corner, the second electric conduction type's base area(34) and the first electric conduction type's emitter area(35) formed on some epitaxial layer's surface of the element activating area, and base electrode(32), emitter electrode(33), and collector electrode(36) formed to contact the base area, the emitter area and the electric conducting film respectively. Consequentially, the voltage between a collector and a base in the bipolar transistor is prevented from destroying an insulated oxidation layer.
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