| 摘要 |
A semiconductor memory apparatus includes an active signal generation unit that generates a plurality of active signals having different enable timings in response to a refresh signal, a precharge signal generation unit that delays at least one of the active signals to generate at least one precharge signal for enabling at least two equalizer signals at the same time, and a sense amplifier driver control unit that generates the plurality of equalizer signals for controlling individual sense amplifier drivers in response to the plurality of active signals and the precharge signal.
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