The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film HI-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
申请公布号
WO2009005824(A1)
申请公布日期
2009.01.08
申请号
WO2008US08262
申请日期
2008.07.03
申请人
MICROLINK DEVICES, INC.;PAN, NOREN;HILLIER, GLEN;VU, DUY, PHACH;TATAVARTI, RAO;YOUTSEY, CHRISTOPHER;MCCALLUM, DAVID
发明人
PAN, NOREN;HILLIER, GLEN;VU, DUY, PHACH;TATAVARTI, RAO;YOUTSEY, CHRISTOPHER;MCCALLUM, DAVID