发明名称 |
SUBSTRATE FOR MICRODEVICE AND MANUFACTURING METHOD THEREOF, AND MICRODEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for a microdevice which has a through wiring having a fine diameter and a high aspect ratio and a manufacturing method thereof, and to provide the microdevice and a manufacturing method thereof. SOLUTION: The substrate for the microdevice has a substrate body 31, a through hole 32 penetrating the substrate body 31 along the thickness, and the through wiring 37 buried in the through hole 32 and containing a compound of a group IV element and metal forming a compound with the group IV element. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009059971(A) |
申请公布日期 |
2009.03.19 |
申请号 |
JP20070227113 |
申请日期 |
2007.08.31 |
申请人 |
CANON ANELVA CORP |
发明人 |
SAKAMOTO HITOSHI;HIROSE FUMIHIKO;OYAMA NAOKI;TOMITA YUGO;IZUMI KAZUYA |
分类号 |
H01L21/3205;C23C16/14;H01L21/28;H01L21/285;H01L23/12;H01L23/52 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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