| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology of enabling improvement of performance of a semiconductor device.SOLUTION: A thin film transistor 10 includes a wire member 12 supported on a support substrate 11. The wire member 12 has as a core, a conductor wire 20 which functions as a gate line, and a surface of the conductor wire 20 is sequentially covered with a gate insulation film 21 and a channel layer 22. The wire member 12 is supported in a sandwiched manner by source/drain electrodes 13, 14 formed on the support substrate 11. The source/drain electrodes 13, 14 are electrically connected with the channel layer 22 at positions away from each other along a circumferential direction of a cross section of the wire member 12. |
