| 发明名称 | MIS transistors configured to be placed in programmed state and erased state | ||
| 摘要 | A nonvolatile memory device includes a pair of MIS transistors one of which is placed in a programmed state by a first program operation utilizing a hot carrier effect to store one-bit data in the pair of MIS transistors, and a control unit configured to recall the one-bit data from the pair of MIS transistors in a recall operation, to cause an unprogrammed one of the MIS transistors to be placed in a programmed state by a second program operation utilizing a hot carrier effect in response to the one-bit data recalled from the pair of MIS transistors, and to erase the programmed states of both of the MIS transistors in an erase operation. | ||
| 申请公布号 | US9484072(B1) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201514875777 | 申请日期 | 2015.10.06 |
| 申请人 | NSCore, Inc. | 发明人 | Noda Kenji |
| 分类号 | G11C11/34;G11C7/06 | 主分类号 | G11C11/34 |
| 代理机构 | IPUSA, PLLC | 代理人 | IPUSA, PLLC |
| 主权项 | 1. A nonvolatile memory device, comprising: a pair of MIS transistors one of which is placed in a programmed state by a first program operation utilizing a hot carrier effect to store one-bit data in the pair of MIS transistors; and a control unit configured to recall the one-bit data from the pair of MIS transistors in a recall operation, to cause an unprogrammed one of the MIS transistors to be placed in a programmed state by a second program operation utilizing a hot carrier effect in response to the one-bit data recalled from the pair of MIS transistors, and to erase the programmed state of both of the MIS transistors in an erase operation. | ||
| 地址 | Fukuoka JP | ||