CAPACITANCE REDUCTION FOR PILLAR STRUCTURED DEVICES

摘要

In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.

主权项

1. An apparatus, comprising:
a first layer including an n+ dopant or a p+ dopant; an intrinsic layer grown or deposited above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, wherein cavity regions are defined between the pillars; a second layer deposited on a periphery of the pillars thereby forming coated pillars, wherein the second layer is substantially absent on the planar portion of the intrinsic layer between the coated pillars, wherein the second layer includes a n+ dopant when the first layer includes a p+ dopant, wherein the second layer includes a p+ dopant when the first layer includes a n+ dopant; and a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer.