THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.

主权项

1. A semiconductor memory device, comprising:
a stack including gate electrodes sequentially stacked on a substrate; a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes; a vertical channel portion disposed on an inner surface of the vertical insulating structure; and a common source region formed in the substrate and spaced apart from the vertical channel portion, wherein a bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.