| 摘要 |
PROBLEM TO BE SOLVED: To prevent the reduction of spontaneous polarization value by controlling the stress in a film when forming a ferroelectric thin film on an Si single crystal substrate. SOLUTION: The ferroelectric thin film is an epitaxial ferroelectric thin film formed on the Si single crystal substrate, consisting of a ferroelectric material, and when it is assumed to be that a crystal face parallel to the crystal face on the surface of the Si single crystal substrate among the crystal faces of this ferroelectric thin film is Z<SB>F</SB>face, the distance between the Z<SB>F</SB>faces is z<SB>F</SB>, and the distance between the Z<SB>F</SB>faces in a bulk state of a ferroelectric thin film-constituting material is z<SB>FO</SB>, 0.980≤z<SB>F</SB>/z<SB>FO</SB>≤1.010 is satisfied; further, the ferroelectric material is a compound expressed by chemical formula ABO<SB>3</SB>, in which A is at least one kind selected from the group consisting of Ca, Ba, Sr, K, Na, Li, La and Cd; B is at least one kind selected from the group consisting of Ti, Zr, Ta and Nb, or a rare earth element-containing lead titanate, having a perovskite crystal structure, and the thickness of the ferroelectric thin film is 2-100 nm. COPYRIGHT: (C)2007,JPO&INPIT
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